CRYOGENIC SENSORS
Field of application: the measurement of a temperature‚, magnet field and strain in the range 4.2-300 K, 0 - 15 T and +/- 2 x 10-3 respectively.
Example of application: an instrumentation of the superconductive magnet system and other cryogenic equipment (he similar sensors were used for the instrumentation of Tokamak-15, Russia).
MAIN PARAMETERS OF SENSORS:
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| Overall view |
Conventional symbols:
1 - sensor element
2 - sensor body
3 - hermetic
4 - current leads and voltage tapes
SEMICONDUCTOR RESISTANCE THERMOMETERS:
Semiconductor:
- germanium
Dimension of sensor's body:
- ø 4 x 6 mm
Connection scheme:
- 2 or 4-wire
Min/Max range:
- 4.2 - 400 K;
Sensitivity:
- 100 - 400 K up to 5 %/K
- 30 - 100 K up to 10 %/K
- 4.2 - 30 K up to 100 %/K
Accuracy:
- 30 - 400 K 2 %
- 4.2 - 30 K 1 %
Measurement current:
- up to 10 mA
Response time:
- 10 ms or faster
Magnetic resistance influence:
- < 0.01K on 8T by 4.2 K
SEMICONDUCTOR STRAIN GAUGES:
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Conventional symbols:
1 - sensor element
2 - joint area
3 - current leads and voltage tapes
4 - insulator
5 - connections
Semiconductor:
- silicium
Dimension of sensor's base:
- 8 mm
Connection scheme:
- 4-wire
Operate temperature region:
- 4.2-400 K
Operate strain region:
- +/- 2 x 10-3
Operate magnet field region:
- < 15 T
Sensitivity:
- 40 microV per 1 õ 10-6 strain
Resistivity:
- 200-3000 Ohm
Measurement current:
- <1 mA
Temperature influence:
- <0.03 %/K
HALL PROBES:
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Conventional symbols:
1 - sensor element
2 - joint area
3 - current leads and voltage tapes
4 - insulator
Semiconductor:
- silicium
Dimension of sensor's base:
- 6x4x0.2 mm
Connection scheme:
- 4-wire
Operate magnet field region:
- 0-15 T
Operate temperature region:
- 4.2-400 K
- >20 mV per 1 T
Measurement current:
- up to 10 mA
Temperature influence:
- <0.03 %/K
